FQP10N20C - onsemi

Description: Low gate charge ( typical 20 nC); Fast switching; 100% avalanche tested; Improved dv/dt capability; Low Crss ( typical 40.5 pF); 9.5A, 200V, RDS(on) = 0.36Ω@VGS = 10V

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FQP10N20C Overview

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Image	Part Number	Model
	FQP630 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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FQP10N20C - onsemi

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FQP10N20C Overview

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