Please enter a minimum 3 letters or numbers
Technical Content
Part Image

FQP13N10 - onsemi

Description: Low Crss ( Typ. 20pF); Low gate charge ( Typ. 12nC); 12.8A, 100V, RDS(on) = 180mΩ(Max.) @VGS = 10 V, ID = 6.4A; 175°C maximum junction temperature rating; 100% avalanche tested

Download FQP13N10 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
FQP13N10 - onsemi - PCB symbol
click to zoom
PCB Footprints
FQP13N10 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 MOLDED 3,LEAD+
click to zoom
3D Models
FQP13N10 - onsemi - 3D model - Transistor Outline, Vertical - TO-220 MOLDED 3,LEAD+
click to zoom

FQP13N10 Details

  • Manufacturer Part Number:

    FQP13N10

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    95 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    12.8 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    25 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Packing Method:

    TUBE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    65 W

  • Pulsed Drain Current-Max (IDM):

    51.2 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    110 ns

  • Turn-on Time-Max (ton):

    140 ns

FQP13N10 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQP13N10 is -55°C to 150°C.
  • To ensure proper biasing, the FQP13N10 requires a minimum gate-source voltage (Vgs) of 4V and a maximum drain-source voltage (Vds) of 100V. Additionally, the gate current (Ig) should be limited to 100mA.
  • For optimal thermal performance, it is recommended to use a PCB with a thermal pad and a heat sink. The device should be mounted on a copper plane with a minimum size of 1 inch x 1 inch. Additionally, a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K should be used.
  • To protect the FQP13N10 from ESD, it is recommended to handle the device in an ESD-controlled environment, use ESD-protective packaging, and ensure that all equipment and tools are properly grounded. Additionally, an ESD protection diode can be used in parallel with the device to protect it from voltage spikes.
  • A gate drive circuit with a resistive divider and a bootstrap capacitor is recommended for the FQP13N10. The resistive divider should be designed to provide a voltage drop of around 5-10V, and the bootstrap capacitor should be around 10-100nF.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQP13N10 Overview

Use the download button to access the FQP13N10 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FQP13, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FQP13N10

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑