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FQP13N10L - onsemi

Description: 12.8A, 100V, RDS(on) = 180mΩ(Max.) @VGS = 10 V, ID = 6.4A; 100% avalanche tested; Low Crss ( Typ. 20pF); 175°C maximum junction temperature rating; Low gate charge ( Typ. 8.7nC)

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PCB Footprints
FQP13N10L - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 3 LEAD /
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3D Models
FQP13N10L - onsemi  - 3D model - Transistor Outline, Vertical - TO-220 3 LEAD /
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FQP13N10L Details

  • Manufacturer Part Number:

    FQP13N10L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    FAST SWITCHING

  • Avalanche Energy Rating (Eas):

    95 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    12.8 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    65 W

  • Pulsed Drain Current-Max (IDM):

    51.2 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQP13N10L Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQP13N10L is -55°C to 150°C.
  • To ensure proper biasing, the FQP13N10L requires a gate-source voltage (Vgs) between 2V and 4V, and a drain-source voltage (Vds) between 10V and 100V, depending on the application.
  • The recommended gate resistor value for the FQP13N10L is typically between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
  • To protect the FQP13N10L from overvoltage and overcurrent, use a voltage regulator or a zener diode to limit the voltage, and consider adding a current-sensing resistor and a fuse or a current limiter to prevent overcurrent.
  • The maximum allowable power dissipation for the FQP13N10L is 125W, but this can be affected by the thermal resistance of the package and the ambient temperature.

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FQP13N10L Overview

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