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FQP2N60C - onsemi

Description: Obsolete - N-Channel QFET MOSFET 800V, 2.4A, 6.3Ω

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PCB Footprints
FQP2N60C - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A
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3D Models
FQP2N60C - onsemi  - 3D model - Transistor Outline, Vertical - TO−220−3LD CASE 340AT ISSUE A
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FQP2N60C Details

  • Manufacturer Part Number:

    FQP2N60C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    120 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    4.7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5.6 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    54 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    124 ns

  • Turn-on Time-Max (ton):

    88 ns

FQP2N60C Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQP2N60C is -55°C to 150°C.
  • To ensure proper biasing, the FQP2N60C requires a gate-source voltage (Vgs) between 2V and 10V, and a drain-source voltage (Vds) between 0V and 600V.
  • The recommended gate resistor value for the FQP2N60C is between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
  • Yes, the FQP2N60C is suitable for high-frequency switching applications up to 1MHz, but the user should ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
  • To protect the FQP2N60C from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB has proper ESD protection circuits, such as TVS diodes or ESD protection arrays.

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FQP2N60C Overview

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Image Part Number Model
Part Image FQP2N60 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2.4A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB