FQP2N90 - onsemi

Description: 2.2A, 900V, RDS(on) = 7.2Ω(Max.) @VGS = 10 V, ID = 1.1A; 100% avalanche tested; Low Crss ( Typ. 5.5pF); Low gate charge ( Typ. 12nC)

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Image	Part Number	Model
	FQP2N90_NL Fairchild Semiconductor Corporation Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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FQP2N90 - onsemi

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