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FQP50N06 - onsemi

Description: Fast switching ; 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V ; Improved dv/dt capability ; 175°C maximum junction temperature rating; 100% avalanche tested ; Low Crss ( typical 65 pF) ; Low gate charge ( typical 31 nC)

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PCB Footprints
FQP50N06 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-ren2
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FQP50N06 - onsemi  - 3D model - Transistor Outline, Vertical - TO-220-ren2
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FQP50N06 Details

  • Manufacturer Part Number:

    FQP50N06

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    39 Weeks, 4 Days

  • Date Of Intro:

    1999-12-07

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    490 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQP50N06 Frequently Asked Questions (FAQs)

  • The maximum SOA for the FQP50N06 is typically defined by the device's voltage and current ratings. For this device, the maximum SOA is approximately 50V and 50A. However, it's essential to consult the datasheet and application notes for specific guidance on SOA and thermal management.
  • Proper thermal management is crucial for the FQP50N06. Ensure good thermal contact between the device and a heat sink, and consider using thermal interface materials (TIMs) to minimize thermal resistance. Also, follow the recommended PCB layout and thermal design guidelines in the datasheet and application notes.
  • The recommended gate drive voltage for the FQP50N06 is typically between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information on gate drive requirements.
  • Yes, the FQP50N06 is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is optimized for high-frequency operation. Consult the datasheet and application notes for more information on high-frequency operation.
  • To protect the FQP50N06 from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Ensure that the device is properly grounded during handling and assembly, and consider using ESD protection devices in the circuit design.

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FQP50N06 Overview

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Part Image FQP50N06 Rochester Electronics LLC

50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

Part Image FQP50N06L-EPKE0003 onsemi

Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image FQP50N06_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image FQP50N06J69Z Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image FQP50N06LJ69Z Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for FQP50N06, check out Findchips.com