FQP50 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQP50N06L onsemi	1	Low gate charge ( Typ. 24.5nC); 52.4A, 60V, RDS(on) = 21mΩ(Max.) @VGS = 10 V, ID = 26.2A; 175°C maximum junction temperature rating; Low Crss ( Typ. 90pF); 100% avalanche tested	Transistor Outline, Vertical	FQP50N06L	3D model available Symbol and footprint available 3	1 Download Model
	FQP50N06 onsemi	1	Fast switching ; 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V ; Improved dv/dt capability ; 175°C maximum junction temperature rating; 100% avalanche tested ; Low Crss ( typical 65 pF) ; Low gate charge ( typical 31 nC)	Transistor Outline, Vertical	FQP50N06	3D model available Symbol and footprint available 3	1 Download Model
	FQP50N06 Rochester Electronics LLC	1	50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN		FQP50N06	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP50N06 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP50N06	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQP50N06_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP50N06_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP50N06J69Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP50N06J69Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP50N06LJ69Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		FQP50N06LJ69Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP50N06L Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP50N06L	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQP50N06L-EPKE0003 onsemi	1	Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		FQP50N06L-EPKE0003	3D model not available Symbol and footprint not available 0	0 Build or Request

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