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FQP50N06L - onsemi

Description: Low gate charge ( Typ. 24.5nC); 52.4A, 60V, RDS(on) = 21mΩ(Max.) @VGS = 10 V, ID = 26.2A; 175°C maximum junction temperature rating; Low Crss ( Typ. 90pF); 100% avalanche tested

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PCB Footprints
FQP50N06L - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - to 220
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FQP50N06L - onsemi  - 3D model - Transistor Outline, Vertical - to 220
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FQP50N06L Details

  • Manufacturer Part Number:

    FQP50N06L

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3

  • Package Description:

    TO-220, 3 PIN

  • Manufacturer Package Code:

    340AT

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    31 Weeks, 5 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    990 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    52.4 A

  • Drain-source On Resistance-Max:

    0.025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    121 W

  • Pulsed Drain Current-Max (IDM):

    210 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    470 ns

  • Turn-on Time-Max (ton):

    820 ns

FQP50N06L Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FQP50N06L can withstand is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and consider using a thermal interface material.
  • The maximum voltage that can be applied to the gate of the FQP50N06L is ±20V. Exceeding this voltage can damage the device.
  • Yes, the FQP50N06L is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the switching frequency is within the recommended range.
  • To protect the FQP50N06L from ESD, handle the device by the body or use an anti-static wrist strap. Ensure that the device is stored in an anti-static bag or tube, and avoid touching the device's pins or leads.

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FQP50N06L Overview

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Part Image FQP50N06 Rochester Electronics LLC

50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

Part Image FQP50N06L-EPKE0003 onsemi

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Part Image FQP50N06_NL Fairchild Semiconductor Corporation

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Part Image FQP50N06J69Z Fairchild Semiconductor Corporation

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Part Image FQP50N06LJ69Z Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for FQP50N06L, check out Findchips.com