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FQPF50N06 - onsemi

Description: FQPF50N06 N-Channel MOSFET Transistor, 31 A, 60 V, 3-Pin TO-220F Fairchild

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FQPF50N06 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 F
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FQPF50N06 Details

  • Manufacturer Part Number:

    FQPF50N06

  • Brand Name:

    ON Semiconductor

  • Pbfree Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220F, 3 PIN

  • Manufacturer Package Code:

    TO220M03

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    495 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    90 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    47 W

  • Pulsed Drain Current-Max (IDM):

    124 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    270 ns

  • Turn-on Time-Max (ton):

    260 ns

FQPF50N06 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FQPF50N06 is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink, and provide adequate airflow around the heat sink.
  • The recommended gate drive voltage for the FQPF50N06 is between 10V and 15V. However, the exact voltage may vary depending on the specific application and required switching speed.
  • Yes, the FQPF50N06 is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching losses and thermal performance should be carefully evaluated to ensure reliable operation.
  • To protect the FQPF50N06 from overvoltage and overcurrent, use a voltage clamp or transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, implement overcurrent protection using a fuse or current-sensing resistor.

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