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FQS4901TF - onsemi

Description: Low gate charge ( Typ. 5.8nC); 0.45A, 400V, RDS(on) = 4.2Ω(Max.) @VGS = 10 V, ID = 0.225A; Low Crss ( Typ. 5pF); 100% avalanche tested

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FQS4901TF - onsemi PCB footprint - Small Outline Packages - Small Outline Packages - FQS4901TF
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FQS4901TF Details

  • Manufacturer Part Number:

    FQS4901TF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOIC-8

  • Package Description:

    SOP-8

  • Manufacturer Package Code:

    751EB

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    0.45 A

  • Drain-source On Resistance-Max:

    4.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    1.8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQS4901TF Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal path short and use a thermal pad on the bottom of the package.
  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's power handling at high temperatures.
  • The maximum allowed voltage on the gate driver output is 18V, but it's recommended to keep it below 15V to ensure reliable operation and minimize stress on the device.
  • Yes, the FQS4901TF can be used in a half-bridge configuration, but ensure proper dead-time management and consider the impact on switching losses and thermal performance.
  • The optimal gate resistor value depends on the specific application, but a good starting point is 10-20 ohms. Adjust the value based on the device's switching frequency, voltage, and current requirements.

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FQS4901TF Overview

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Part Image FQS4901TF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 0.45A I(D), 400V, 4.2ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET