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FQU17P06TU - onsemi

Description: Low Gate Charge ( Typ. 21nC); 100% Avalanche Tested; Low Crss ( Typ. 80pF); -12A, -60V, RDS(on) = 135mΩ(Max.) @VGS = -10 V, ID = -6A

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FQU17P06TU Details

  • Manufacturer Part Number:

    FQU17P06TU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    IPAK-3 / DPAK-3 STRAIGHT LEAD

  • Package Description:

    IPAK-3

  • Manufacturer Package Code:

    369AR

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    300 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.135 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    105 pF

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    44 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    185 ns

  • Turn-on Time-Max (ton):

    245 ns

FQU17P06TU Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the FQU17P06TU is a pad layout with a minimum size of 3.5mm x 2.5mm, with a thermal pad size of 2.5mm x 2.5mm, and a solder mask clearance of 0.5mm.
  • To ensure proper thermal management, ensure a good thermal interface between the device and the heat sink, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and design the heat sink to maintain a junction temperature (Tj) below 150°C.
  • The maximum allowed voltage transient for the FQU17P06TU is 650V, which is 50V above the maximum rated drain-source voltage (Vds) of 600V.
  • Yes, the FQU17P06TU is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and snubber design to minimize ringing and electromagnetic interference (EMI).
  • To protect the FQU17P06TU from ESD, handle the device with an anti-static wrist strap or mat, use ESD-protected packaging and storage, and ensure the PCB design includes ESD protection components, such as TVS diodes or ESD arrays.

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FQU17P06TU Overview

Use the download button to access the FQU17P06TU 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Image Part Number Model
Part Image FQU17P06TU Rochester Electronics LLC

12A, 60V, 0.135ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3

Part Image FQU17P06TU Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Part Image FQU17P06 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251