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FQU13N10LTU
onsemi
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1 | Low Gate Charge ( Typ. 9.5nC); 100% Avalanche Tested; Low Crss ( Typ. 35pF); 10A, 100V, RDS(on) = 180mΩ(Max.) @VGS = 10 V, ID = 5A; Low Level Gate Drive Requirement Allowing Direct Operation From Logic Drivers | Transistor Outline, Vertical | FQU13N10LTU |
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FQU13N10LTU
Rochester Electronics LLC
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1 | 10A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | FQU13N10LTU |
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FQU13N10LTU
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | FQU13N10LTU |
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![Part Image]([null,null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to251_3.jpg"])
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