Part Image

FQU13N10LTU - onsemi

Description: Low Gate Charge ( Typ. 9.5nC); 100% Avalanche Tested; Low Crss ( Typ. 35pF); 10A, 100V, RDS(on) = 180mΩ(Max.) @VGS = 10 V, ID = 5A; Low Level Gate Drive Requirement Allowing Direct Operation From Logic Drivers

Download FQU13N10LTU Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FQU13N10LTU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - FQU13N10LTU
click to zoom
3D Models
FQU13N10LTU - onsemi  - 3D model - Transistor Outline, Vertical - FQU13N10LTU
click to zoom

FQU13N10LTU Details

  • Manufacturer Part Number:

    FQU13N10LTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    IPAK-3 / DPAK-3 STRAIGHT LEAD

  • Package Description:

    IPAK-3

  • Manufacturer Package Code:

    369AR

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    25 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    95 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    40 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQU13N10LTU Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQU13N10LTU is -55°C to 150°C.
  • To ensure proper biasing, follow the recommended biasing circuit and voltage levels outlined in the datasheet, and ensure the device is operated within the specified voltage and current ranges.
  • For optimal thermal performance, use a multi-layer PCB with a solid ground plane, and ensure good thermal conductivity between the device and the heat sink. Follow the recommended PCB layout and thermal management guidelines in the datasheet and application notes.
  • Handle the device with ESD-protective equipment, and ensure the PCB design includes ESD protection circuits and devices. Follow proper ESD handling and storage procedures to prevent damage.
  • Follow the recommended soldering and assembly procedures outlined in the datasheet and application notes, and ensure the device is handled and stored in accordance with the manufacturer's guidelines.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQU13N10LTU Overview

Use the download button to access the FQU13N10LTU schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FQU13, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FQU13N10LTU

Showing 0 results

FQU13N10LTU Alternates

Showing results

Image Part Number Model
Part Image FQU13N10LTU Rochester Electronics LLC

10A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3

Part Image FQU13N10LTU Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251