FQU13 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FQU13N10LTU onsemi	1	Low Gate Charge ( Typ. 9.5nC); 100% Avalanche Tested; Low Crss ( Typ. 35pF); 10A, 100V, RDS(on) = 180mΩ(Max.) @VGS = 10 V, ID = 5A; Low Level Gate Drive Requirement Allowing Direct Operation From Logic Drivers	Transistor Outline, Vertical	FQU13N10LTU	3D model available Symbol and footprint available 3	1 Download Model
	FQU13N06LTU onsemi	1	11A, 60V, RDS(on) = 115mΩ(Max.) @VGS = 10 V, ID = 5.5A; Low Gate Charge ( Typ. 4.5nC); Low Crss ( Typ. 17pF); 100% Avalanche Tested	Transistor Outline, Vertical	FQU13N06LTU	3D model available Symbol and footprint available 3	1 Download Model
	FQU13N06LTU-WS onsemi	1	11A, 60V, RDS(on) = 115mΩ(Max.) @VGS = 10 V, ID = 5.5A; Low Gate Charge ( Typ. 4.5nC); Low Crss ( Typ. 17pF); 100% Avalanche Tested	Transistor Outline, Vertical	FQU13N06LTU-WS	3D model available Symbol and footprint available 3	1 Download Model
	FQU13N06TU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU13N06TU	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQU13N10LTU Rochester Electronics LLC	1	10A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3		FQU13N10LTU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU13N10LTU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU13N10LTU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU13N10TU Rochester Electronics LLC	1	10A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3		FQU13N10TU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU13N06TU_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU13N06TU_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU13N06TU Rochester Electronics LLC	1	10A, 60V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3		FQU13N06TU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU13N10TU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU13N10TU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU13N06 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU13N06	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU13N06LTU Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU13N06LTU	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU13N10L Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU13N10L	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU13N06LTU_WS Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA		FQU13N06LTU_WS	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU13N06L Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU13N06L	3D model not available Symbol and footprint not available 0	0 Build or Request

	FQU13N06LTU_WS onsemi	1	N-Channel QFET® MOSFET 60V, 11A, 115mΩ, TO-251 3L (IPAK), 30240-RAIL		FQU13N06LTU_WS	3D model not available Symbol and footprint not available 0	0 Build or Request
	FQU13N10 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251		FQU13N10	3D model not available Symbol and footprint not available 0	0 Build or Request

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