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FQU13N06LTU - onsemi

Description: 11A, 60V, RDS(on) = 115mΩ(Max.) @VGS = 10 V, ID = 5.5A; Low Gate Charge ( Typ. 4.5nC); Low Crss ( Typ. 17pF); 100% Avalanche Tested

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PCB Footprints
FQU13N06LTU - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - DPAK3 (IPAK) CASE 369AR ISSUE O-1
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3D Models
FQU13N06LTU - onsemi  - 3D model - Transistor Outline, Vertical - DPAK3 (IPAK) CASE 369AR ISSUE O-1
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FQU13N06LTU Details

  • Manufacturer Part Number:

    FQU13N06LTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    IPAK-3 / DPAK-3 STRAIGHT LEAD

  • Package Description:

    IPAK-3

  • Manufacturer Package Code:

    369AR

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.145 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    28 W

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQU13N06LTU Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FQU13N06LTU can withstand is 150°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal via to dissipate heat efficiently.
  • The recommended gate resistor value for the FQU13N06LTU is between 10Ω to 100Ω, depending on the specific application and switching frequency.
  • Yes, the FQU13N06LTU is qualified to automotive and industrial standards, making it suitable for high-reliability applications.
  • To protect the FQU13N06LTU from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the PCB is designed with ESD protection in mind.

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FQU13N06LTU Overview

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Part Image FQU13N06LTU Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Part Image FQU13N06L Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Part Image FQU13N06LTU_WS onsemi

N-Channel QFET® MOSFET 60V, 11A, 115mΩ, TO-251 3L (IPAK), 30240-RAIL