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FQU13N06LTU-WS - onsemi

Description: 11A, 60V, RDS(on) = 115mΩ(Max.) @VGS = 10 V, ID = 5.5A; Low Gate Charge ( Typ. 4.5nC); Low Crss ( Typ. 17pF); 100% Avalanche Tested

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FQU13N06LTU-WS - onsemi - PCB symbol
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PCB Footprints
FQU13N06LTU-WS - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-251 3L (IPAK)*
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3D Models
FQU13N06LTU-WS - onsemi - 3D model - Transistor Outline, Vertical - TO-251 3L (IPAK)*
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FQU13N06LTU-WS Details

  • Manufacturer Part Number:

    FQU13N06LTU-WS

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-251 3L (IPAK)

  • Package Description:

    PLASTIC, IPAK-3

  • Manufacturer Package Code:

    369AR

  • Reach Compliance Code:

    Not Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    90 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.145 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    28 W

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQU13N06LTU-WS Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the FQU13N06LTU-WS is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper cooling, make sure to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The recommended thermal resistance (RθJA) is ≤ 40°C/W. Additionally, ensure good airflow around the device and heat sink.
  • The recommended gate drive voltage for the FQU13N06LTU-WS is between 10V and 15V. However, the device can tolerate up to 20V gate drive voltage, but this may reduce the device's lifespan.
  • Yes, the FQU13N06LTU-WS is suitable for high-frequency switching applications up to 1 MHz. However, ensure that the device is properly cooled and the switching frequency is within the recommended range to avoid overheating and reduce electromagnetic interference (EMI).
  • To protect the FQU13N06LTU-WS from ESD, handle the device by the body or use an anti-static wrist strap. Ensure that the device is stored in an anti-static bag or container, and avoid touching the device's pins or leads.

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FQU13N06LTU-WS Overview

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