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FS800R07A2E3_B31 - Infineon

Description: IGBT Modules HYBRID PACK 2

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FS800R07A2E3_B31 Details

  • Manufacturer Part Number:

    FS800R07A2E3_B31

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    700 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X33

  • Number of Elements:

    6

  • Number of Terminals:

    33

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1550 W

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    620 ns

  • Turn-on Time-Nom (ton):

    230 ns

  • VCEsat-Max:

    1.5 V

FS800R07A2E3_B31 Frequently Asked Questions (FAQs)

  • Infineon provides a reference design guide for the FS800R07A2E3_B31, which includes recommendations for PCB layout, thermal design, and heat sink attachment. It's essential to follow these guidelines to ensure optimal performance, reliability, and thermal management.
  • When selecting a gate driver for the FS800R07A2E3_B31, consider factors such as the driver's output current, voltage rating, and switching frequency. Ensure the driver is compatible with the IGBT module's gate-emitter voltage and current requirements. Infineon provides a list of recommended gate drivers in the datasheet or application notes.
  • Monitor the FS800R07A2E3_B31's temperature, voltage, and current to detect potential faults. Implement overcurrent protection, overvoltage protection, and thermal monitoring to prevent damage. Infineon provides guidelines for fault detection and protection in the datasheet and application notes.
  • To ensure EMC, follow Infineon's guidelines for PCB layout, component placement, and shielding. Implement proper filtering, grounding, and shielding techniques to minimize electromagnetic interference. Consult the datasheet and application notes for specific EMC recommendations.
  • Handle the FS800R07A2E3_B31 with care to prevent damage. Store the module in a dry, cool place, away from direct sunlight and moisture. Avoid bending or flexing the module, and handle it by the edges to prevent electrostatic discharge. Follow Infineon's storage and handling guidelines to ensure the module's reliability and performance.

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FS800R07A2E3_B31 Overview

Use the download button to access the FS800R07A2E3_B31 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image FS800R07A2E3BOSA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 700A I(C), 650V V(BR)CES, N-Channel

Part Image FS800R07A2E3B31BOSA1 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 700A I(C), 650V V(BR)CES