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FSB50660SF - onsemi

Description: Embedded Bootstrap Diode in the Package; Optimized for Low Electromagnetic Interference; Active-High Interface, Can Work With 3.3 V / 5 V Logic; Temperature Sensing Built in HVIC; HVIC for Gate Driving and Undervoltage Protection; 600 V RDS(on)= 700 mΩ(Max) SuperFET MOSFET 3-Phase Inverter Including HVICs; Isolation Voltage Rating of 1500 Vrms for 1 min.; Three Separate Open-Source Pins from Low Side MOSFETs for Three Leg Current Sensing; UL Certified No. E209204; RoHS Compliant

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Part Image FSB50660SF Fairchild Semiconductor Corporation

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