Description:Isolation voltage rating of 1500Vrms for 1min.; Temperature sensing built in HVIC; Active-High interface, can work with 3.3V/5V logic; HVIC for gate driving and under-voltage protection; Optimized for low electromagnetic interference; Three separate open-emitter pins from low side MOSFETs for three leg current sensing; 250V RDS(on)=0.45Ω(max) FRFET® MOSFET 3-phase inverter including HVICs; RoHS compliant; Embedded bootstrap diodes in the package; Moisture Sensitive Level (MSL) 3
The maximum junction temperature (Tj) for the FSB50825AS is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to ensure the device's lifespan.
Proper cooling is crucial for the FSB50825AS. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1°C/W. Also, make sure the ambient temperature is within the recommended range.
For optimal performance, follow a 2-layer or 4-layer PCB layout with a solid ground plane and a separate power plane. Keep the high-current paths short and wide, and use vias to connect the power planes. Refer to the onsemi application note AND9093/D for more details.
The FSB50825AS is not hermetically sealed, so it's not recommended for use in high-humidity environments. If you must use it in such an environment, ensure the device is properly sealed or conformally coated to prevent moisture ingress.
The recommended gate drive voltage for the FSB50825AS is between 10V and 15V. However, the exact voltage depends on the specific application and the required switching frequency. Consult the onsemi application note AND9093/D for more information.
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