Part Image

FZ400R12KE4 - Infineon

Description: IGBT Modules IGBT 1200V 400A

Download FZ400R12KE4 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
FZ400R12KE4 - Infineon  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

FZ400R12KE4 Details

  • Manufacturer Part Number:

    FZ400R12KE4

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    MODULE

  • Pin Count:

    5

  • Country Of Origin:

    Hungary

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    400 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2400 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    810 ns

  • Turn-on Time-Nom (ton):

    370 ns

  • VCEsat-Max:

    2.1 V

FZ400R12KE4 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the FZ400R12KE4 is 150°C, as specified in the datasheet. However, it's recommended to operate the module at a temperature below 125°C for optimal performance and reliability.
  • To ensure proper thermal management, it's essential to provide a good thermal interface between the module and the heat sink. Apply a thin layer of thermal interface material (TIM) to the base plate of the module, and ensure the heat sink is properly mounted and secured.
  • The recommended gate resistor value for the FZ400R12KE4 is between 10 ohms and 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the FZ400R12KE4 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The maximum allowable voltage transient for the FZ400R12KE4 is 1200 V, as specified in the datasheet. However, it's recommended to limit the voltage transient to 1000 V or less to ensure reliable operation and prevent damage to the module.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

FZ400R12KE4 Overview

Use the download button to access the FZ400R12KE4 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like FZ400, or try a keyword search, such as IGBTs

Parts related to FZ400R12KE4

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

FZ400R12KE4 Alternates

Showing results

Image Part Number Model
Part Image BSM400GA120DN2 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 550A I(C), 1200V V(BR)CES, N-Channel

Part Image BSM400GA120DN2 Eupec Gmbh & Co Kg

Insulated Gate Bipolar Transistor, 550A I(C), 1200V V(BR)CES, N-Channel

Part Image BSM400GA120DLC Infineon Technologies AG

Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel

Part Image BSM300GA120DN2 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 430A I(C), 1200V V(BR)CES, N-Channel