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HFA3101BZ96 - Renesas Electronics

Description: The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil's bonded wafer UHF-1 SOI process, this array achieves very high fT (10GHz) while maintaining excellent hFE and VBE matching characteristics that have been maximized through careful attention to circuit design and layout, making this product ideal for communication circuits. For use in mixer applications, the cell provides high gain and good cancellation of 2nd order distortion terms.

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HFA3101BZ96 - Renesas Electronics - PCB symbol
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HFA3101BZ96 - Renesas Electronics PCB footprint - Small Outline Packages - Small Outline Packages - M8.15-ren4
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HFA3101BZ96 - Renesas Electronics - 3D model - Small Outline Packages - M8.15-ren4
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HFA3101BZ96 Details

  • Manufacturer Part Number:

    HFA3101BZ96

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOICN

  • Pin Count:

    8

  • Manufacturer Package Code:

    M8.15

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.03 A

  • Collector-Emitter Voltage-Max:

    8 V

  • Configuration:

    COMPLEX

  • Highest Frequency Band:

    ULTRA HIGH FREQUENCY BAND

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    6

  • Number of Terminals:

    8

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    10000 MHz

HFA3101BZ96 Frequently Asked Questions (FAQs)

  • A good PCB layout is crucial for the HFA3101BZ96. Ensure a solid ground plane, keep the input and output traces short and separate, and use a common mode choke to reduce EMI. Refer to the application note 'HFA3101BZ96 PCB Layout Guidelines' for more information.
  • The HFA3101BZ96 has a high power dissipation. Ensure good thermal conductivity by using a heat sink, thermal vias, and a thermal pad on the PCB. Keep the device away from other heat sources and ensure good airflow. Refer to the datasheet for thermal resistance and junction temperature ratings.
  • The HFA3101BZ96 requires a 50-ohm input and output termination for optimal performance. Use a 50-ohm resistor in series with the input and output pins, and ensure the termination is close to the device to minimize reflections.
  • The HFA3101BZ96 has a variable gain control pin (VGC). Use a voltage divider network to set the desired gain. Refer to the datasheet for the gain control voltage range and the application note 'HFA3101BZ96 Gain Control' for more information.
  • Use a combination of ceramic and electrolytic capacitors for power supply decoupling. Place a 100nF ceramic capacitor close to the device's power pins, and a 10uF electrolytic capacitor further away. Ensure the capacitors are rated for the operating voltage and have low ESR.

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HFA3101BZ96 Overview

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