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HGTG20N60B3 - onsemi

Description: UFS Series N-Channel IGBTs 40 A, 600 V

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HGTG20N60B3 - onsemi  - 3D model
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HGTG20N60B3 Details

  • Manufacturer Part Number:

    HGTG20N60B3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247-3

  • Manufacturer Package Code:

    340CK

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    360 ns

  • Turn-on Time-Nom (ton):

    45 ns

HGTG20N60B3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the HGTG20N60B3 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a temperature below 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the IGBT module and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistance for the HGTG20N60B3 is between 10 ohms and 20 ohms. This value helps to reduce electromagnetic interference (EMI) and ensures reliable switching performance.
  • Yes, the HGTG20N60B3 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are matched in terms of their electrical characteristics, and that the gate drive circuits are properly synchronized to prevent uneven current sharing.
  • The maximum allowable voltage transient for the HGTG20N60B3 is 600 V. Exceeding this value can damage the device. It's essential to ensure that the device is protected from voltage transients and spikes using suitable protection circuits.

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HGTG20N60B3 Overview

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Part Image HGTG20N60B3 Intersil Corporation

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247