HGTP5N120BND - onsemi

Description: 10A, 1200V @ TC = 110°C; Short Circuit Rating; Typical Fall Time. . . . . . . . . . . . . . . . 175ns at TJ = 150°C; Low Saturation Voltage : V CE(sat) = 2.45 V @ I C = 5A; Low Conduction Loss

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Image	Part Number	Model
	HGTP5N120BND Intersil Corporation Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel
	HGTP5N120BND Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
	HGTP5N120BND_NL Fairchild Semiconductor Corporation Insulated Gate Bipolar Transistor, 21A I(C), 1200V V(BR)CES, N-Channel, TO-220AB
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HGTP5N120BND - onsemi

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