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HUF75321D3ST - onsemi

Description: N-Channel 55 V 20A (Tc) 93W (Tc) Surface Mount TO-252AA , 36mOhm @,10V , 4V @ 250µA , -55°C ~ 175°C (TJ)

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PCB Footprints
HUF75321D3ST - onsemi PCB footprint - Other - Other - DPAK3 6.10x6.54x2.29, 4.57P CASE 369AS ISSUE B_2025-2
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HUF75321D3ST Details

  • Manufacturer Part Number:

    HUF75321D3ST

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    TO-252AA, 3 PIN

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    93 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

HUF75321D3ST Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 oz copper thickness and a thermal relief pattern under the device.
  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor the device's junction temperature and adjust the system design accordingly.
  • Monitor the device's current, voltage, and temperature. Implement overcurrent protection (OCP), overvoltage protection (OVP), and thermal shutdown (TSD) to prevent damage from excessive stress.
  • Implement a low-dropout regulator (LDO) or a switching regulator to maintain a stable input voltage. Ensure the device's input capacitance is minimized, and the output capacitance is optimized for the specific application.
  • Implement human body model (HBM) and charged device model (CDM) protection using TVS diodes or ESD protection arrays. Ensure the PCB layout and component placement minimize the risk of ESD damage.

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HUF75321D3ST Overview

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Part Image HUF75321D3ST Rochester Electronics LLC

20A, 55V, 0.036ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN

Part Image HUF75321D3ST Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image HUF75321D3S Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image STD30NE06 STMicroelectronics

Power Field-Effect Transistor, 30A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image HUF75321D3S_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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