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HUF75344G3 - onsemi

Description: UIS Rating Curve; TB334, “Guidelines for Soldering Surface MountComponents to PC Boards”; Thermal Impedance PSPICE and SABER Models; 75A, 55V; Temperature Compensated PSPICE® and SABER™Models; Simulation Models; Related Literature; Peak Current vs Pulse Width Curve

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HUF75344G3 - onsemi  - 3D model
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HUF75344G3 Details

  • Manufacturer Part Number:

    HUF75344G3

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247-3

  • Package Description:

    TO-247, 3 PIN

  • Manufacturer Package Code:

    340CK

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    5.1

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    285 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

HUF75344G3 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal path short and use a thermal pad on the bottom of the package.
  • Use a heat sink, ensure good airflow, and follow the recommended thermal design guidelines. Monitor the junction temperature (TJ) and adjust the operating conditions accordingly.
  • The maximum allowed voltage on the input pins is 5.5V. Exceeding this voltage may damage the device.
  • Yes, the HUF75344G3 is qualified for automotive and high-reliability applications. However, additional testing and validation may be required to meet specific industry standards.
  • Use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins. Follow proper PCB design and handling practices to minimize ESD risks.

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HUF75344G3 Overview

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Part Image HUF75344G3 Intersil Corporation

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image HUF75345G3 Intersil Corporation

Power Field-Effect Transistor, 75A I(D), 55V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image HUF75337G3 Intersil Corporation

Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image HUF75344G3_NL Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247