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IGW40N65F5FKSA1 - Infineon

Description: IGBT 650 V 74 A 255 W Through Hole PG-TO247-3

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IGW40N65F5FKSA1 - Infineon  - 3D model
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IGW40N65F5FKSA1 Details

  • Manufacturer Part Number:

    IGW40N65F5FKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Collector Current-Max (IC):

    74 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Gate-Emitter Thr Voltage-Max:

    4.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-609 Code:

    e3

  • Operating Temperature-Max:

    175 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    255 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

IGW40N65F5FKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IGW40N65F5FKSA1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper thermal management, it's essential to provide adequate heat sinking and cooling mechanisms. This can be achieved by using a heat sink with a thermal resistance of ≤ 0.5 K/W, and ensuring good thermal contact between the module and the heat sink. Additionally, consider using a thermal interface material and ensuring good airflow around the heat sink.
  • The recommended gate resistor value for the IGW40N65F5FKSA1 is between 10 Ω to 20 Ω. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • Yes, the IGW40N65F5FKSA1 can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are properly matched, and the gate drive circuits are designed to handle the increased current. Consult the datasheet and application notes for more information on parallel operation.
  • The recommended dead time for the IGW40N65F5FKSA1 is typically in the range of 100 ns to 500 ns, depending on the specific application and switching frequency. However, the optimal dead time may vary depending on the specific requirements of the application. Consult the datasheet and application notes for more information.

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IGW40N65F5FKSA1 Overview

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