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IPB027N10N3G - Infineon

Description: Infineon IPB027N10N3G N-channel MOSFET Transistor, 120 A, 100 V, 3-Pin TO-263

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IPB027N10N3G Alternates

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Image Part Number Model
Part Image IPB027N10N3GATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Part Image IPB027N10N3GXT Infineon Technologies AG

Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB