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IPB80N06S2-09 - Infineon

Description: Infineon IPB80N06S2-09 N-channel MOSFET Transistor, 80 A, 55 V, 3-Pin TO-263

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Part Image IPB80N06S209ATMA2 Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IPB80N06S209ATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IPB80N06S209XT Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB