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IPD70R600P7SAUMA1 - Infineon

Description: 700V CoolMOS P7 Power Transistor, VDS @ Tj=25°C 700V, RDS(on),max 0.6Ω, Qg,typ 10.5nC, V(GS)th,typ 3V, PG-TO 252-3

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Part Image IPD70R600P7S Infineon Technologies AG

Power Field-Effect Transistor, 8.5A I(D), 700V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252