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IPD80R1K4CE - Infineon

Description: Infineon IPD80R1K4CE N-channel MOSFET Transistor, 3.9 A, 800 V, 3+Tab-Pin TO-252

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Part Image IPD80R1K4CEATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 3.9A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252