Part Image

IPW65R041CFD - Infineon

Description: MOSFETs N-Ch 700V 68.5A TO247-3 CoolMOS CFD2

Download IPW65R041CFD Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
IPW65R041CFD - Infineon  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

IPW65R041CFD Details

  • Manufacturer Part Number:

    IPW65R041CFD

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    2185 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    68.5 A

  • Drain-source On Resistance-Max:

    0.041 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    500 W

  • Pulsed Drain Current-Max (IDM):

    255 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPW65R041CFD Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPW65R041CFD is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to implement adequate cooling mechanisms, such as heat sinks or thermal interfaces.
  • The recommended gate resistor value for the IPW65R041CFD is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • To minimize EMI, use a layout with a solid ground plane, keep the power stage and gate driver traces short and away from sensitive analog circuits, and consider using EMI filters or shielding.
  • The maximum allowed voltage transient for the IPW65R041CFD is typically 50 V, but this can vary depending on the specific application and operating conditions.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

IPW65R041CFD Overview

Use the download button to access the IPW65R041CFD 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IPW65, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPW65R041CFD

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

IPW65R041CFD Alternates

Showing results

Image Part Number Model
Part Image IPW65R041CFDFKSA2 Infineon Technologies AG

Power Field-Effect Transistor, 68.5A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW65R041CFDFKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 68.5A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW65R041CFDXK Infineon Technologies AG

Power Field-Effect Transistor, 68.5A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247