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IPW65R041CFDFKSA2 - Infineon

Description: N-Channel 650 V 68.5A (Tc) 500W (Tc) Through Hole PG-TO247-3

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IPW65R041CFDFKSA2 Details

  • Manufacturer Part Number:

    IPW65R041CFDFKSA2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    2185 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    68.5 A

  • Drain-source On Resistance-Max:

    0.041 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    500 W

  • Pulsed Drain Current-Max (IDM):

    255 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPW65R041CFDFKSA2 Frequently Asked Questions (FAQs)

  • The IPW65R041CFDFKSA2 can operate from -40°C to 150°C, making it suitable for high-reliability applications.
  • The device has a thermal pad on the bottom, which should be connected to a heat sink or a thermal interface material to ensure proper heat dissipation.
  • Infineon provides a recommended PCB layout in the datasheet, which includes guidelines for pad layout, thermal vias, and decoupling capacitors.
  • The IPW65R041CFDFKSA2 is rated for a maximum drain-source voltage of 650V, making it suitable for high-voltage applications such as power supplies and motor control.
  • The device has built-in overcurrent and overvoltage protection, but additional external protection circuits may be required depending on the application.

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IPW65R041CFDFKSA2 Overview

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Part Image IPW65R041CFD Infineon Technologies AG

Power Field-Effect Transistor, 68.5A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW65R041CFDFKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 68.5A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW65R041CFDXK Infineon Technologies AG

Power Field-Effect Transistor, 68.5A I(D), 650V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247