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IRF3805SPBF - Infineon

Description: INFINEON - IRF3805SPBF - N CHANNEL MOSFET, 55V, 75A, D2-PAK

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IRF3805SPBF - Infineon PCB footprint - Other - Other - D2PAK(TO-263AB)
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IRF3805SPBF - Infineon  - 3D model - Other - D2PAK(TO-263AB)
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IRF3805SPBF Details

  • Manufacturer Part Number:

    IRF3805SPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    D2PAK-3/2

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    650 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0033 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    630 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    890 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN OVER NICKEL

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF3805SPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF3805SPBF is -55°C to 175°C.
  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
  • The recommended gate drive voltage for the IRF3805SPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF3805SPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper gate drive and layout to minimize switching losses.
  • Use a suitable overvoltage protection circuit, such as a zener diode or a transient voltage suppressor, and implement overcurrent protection using a current sense resistor and a comparator.

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IRF3805SPBF Overview

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Part Image IRF3805STRLPBF International Rectifier

Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF3805SPBF International Rectifier

Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF3805STRR International Rectifier

Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF3805S International Rectifier

Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF3805STRRPBF Infineon Technologies AG

Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for IRF3805SPBF, check out Findchips.com