AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas):
430 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
75 V
Drain Current-Max (ID):
75 A
Drain-source On Resistance-Max:
0.007 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-220AB
JESD-30 Code:
R-PSFM-T3
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
330 W
Pulsed Drain Current-Max (IDM):
550 A
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
IRF3808PBF Frequently Asked Questions (FAQs)
The maximum operating temperature range for the IRF3808PBF is -55°C to 175°C.
To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
The recommended gate drive voltage for the IRF3808PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
Yes, the IRF3808PBF is suitable for high-frequency switching applications, but ensure that the device is operated within its specified switching frequency and duty cycle ratings.
Handle the device with ESD-protective equipment, and ensure that the device is stored in an ESD-protective package or bag when not in use.
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IRF3808PBF Overview
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