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IRF6648TRPBF - Infineon

Description: MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC

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IRF6648TRPBF - Infineon  - 3D model
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IRF6648TRPBF Details

  • Manufacturer Part Number:

    IRF6648TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    ROHS COMPLIANT, ISOMETRIC-3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.6

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Avalanche Energy Rating (Eas):

    47 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    86 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XBCC-N3

  • JESD-609 Code:

    e1

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.8 W

  • Pulsed Drain Current-Max (IDM):

    260 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF6648TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF6648TRPBF is -55°C to 175°C.
  • No, the IRF6648TRPBF is not a radiation-hardened device. It is a commercial-grade power MOSFET.
  • The recommended gate drive voltage for the IRF6648TRPBF is between 10V and 15V.
  • While the IRF6648TRPBF is a high-performance device, it is not designed for high-reliability applications. For such applications, Infineon offers other products with enhanced quality and reliability features.
  • Yes, the IRF6648TRPBF is compatible with lead-free soldering processes and meets the requirements of the RoHS directive.

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IRF6648TRPBF Overview

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Part Image IRF6648 Infineon Technologies AG

Power Field-Effect Transistor, 86A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRF6648PBF Infineon Technologies AG

Power Field-Effect Transistor, 86A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRF6648TRPBF International Rectifier

Power Field-Effect Transistor, 86A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRF6648PBF International Rectifier

Power Field-Effect Transistor, 86A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRF6648 International Rectifier

Power Field-Effect Transistor, 86A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for IRF6648TRPBF, check out Findchips.com