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IRF7105PBF - Infineon

Description: MOSFET N/P-CH 25V 3.5A/2.3A 8SO

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IRF7105PBF Details

  • Manufacturer Part Number:

    IRF7105PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    14 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7105PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7105PBF is -55°C to 175°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 10V and 30V, depending on the application.
  • The recommended gate resistor value for the IRF7105PBF is between 10Ω and 100Ω, depending on the switching frequency and application requirements.
  • To protect the IRF7105PBF from overvoltage and overcurrent, use a voltage regulator or a zener diode to limit the voltage, and add a current sense resistor and a fuse or a current limiter to prevent overcurrent.
  • The maximum allowable power dissipation for the IRF7105PBF is 125W, but this can be increased with proper heat sinking and thermal management.

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IRF7105PBF Overview

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IRF7105PBF Alternates

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Image Part Number Model
Part Image IRF7105TRPBF Infineon Technologies AG

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7105TR Infineon Technologies AG

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7105PBF International Rectifier

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7105TRPBF International Rectifier

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7105TR International Rectifier

Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

For a full list of alternate parts for IRF7105PBF, check out Findchips.com