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IRF7413ZPBF - Infineon

Description: MOSFET N-Ch 30V 13A HEXFET Low Ron SOIC8 Infineon IRF7413ZPBF N-channel MOSFET Transistor, 13 A, 30 V, 8-Pin SOIC

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IRF7413ZPBF - Infineon - PCB symbol
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IRF7413ZPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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IRF7413ZPBF - Infineon - 3D model - Small Outline Packages - SO-8
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IRF7413ZPBF Details

  • Manufacturer Part Number:

    IRF7413ZPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    32 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.01 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7413ZPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7413ZPBF is -55°C to 175°C.
  • To ensure reliability, follow proper PCB design and layout guidelines, use a suitable thermal management system, and ensure the device is operated within its specified ratings and parameters.
  • The recommended gate drive voltage for the IRF7413ZPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF7413ZPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB design and layout to minimize parasitic inductance and capacitance.
  • Handle the device with proper ESD protection, such as using an ESD wrist strap or mat, and ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays.

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IRF7413ZPBF Overview

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