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IRF7451TRPBF - Infineon

Description: N-Channel 150 V 3.6A (Ta) 2.5W (Ta) Surface Mount 8-SO

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IRF7451TRPBF - Infineon - PCB symbol
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IRF7451TRPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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IRF7451TRPBF Details

  • Manufacturer Part Number:

    IRF7451TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    3.6 A

  • Drain-source On Resistance-Max:

    0.09 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    29 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7451TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7451TRPBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRF7451TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF7451TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in anti-static packaging.
  • The maximum allowable power dissipation for the IRF7451TRPBF is 150W, but this can be affected by factors such as ambient temperature, thermal resistance, and airflow.

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IRF7451TRPBF Overview

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IRF7451TRPBF Alternates

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Image Part Number Model
Part Image IRF7451TRPBF International Rectifier

Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image IRF7451TR International Rectifier

Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image IRF7451PBF Infineon Technologies AG

Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image IRF7451 Infineon Technologies AG

Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image IRF7451TR Infineon Technologies AG

Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
For a full list of alternate parts for IRF7451TRPBF, check out Findchips.com