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IRF7456PBF - Infineon

Description: International Rectifier IRF7456PBF N-channel MOSFET Transistor, 16 A, 20 V, 8-Pin SOIC

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IRF7456PBF - Infineon - PCB symbol
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IRF7456PBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - 8 SOIC
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IRF7456PBF - Infineon - 3D model - Small Outline Packages - 8 SOIC
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IRF7456PBF Details

  • Manufacturer Part Number:

    IRF7456PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    250 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.0065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    130 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7456PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7456PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
  • The recommended gate drive voltage for the IRF7456PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF7456PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and thermal management to minimize losses and ensure reliability.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or current-sensing resistor, to prevent damage to the device.

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IRF7456PBF Overview

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IRF7456PBF Alternates

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Image Part Number Model
Part Image IRF7456TRPBF International Rectifier

Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image IRF7456PBF International Rectifier

Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image IRF7456 Infineon Technologies AG

Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image IRF7456TRPBF Infineon Technologies AG

Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Part Image IRF7456TR Infineon Technologies AG

Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
For a full list of alternate parts for IRF7456PBF, check out Findchips.com