Part Image

IRF7490PBF - Infineon

Description: International Rectifier IRF7490PBF N-channel MOSFET Transistor, 5.4 A, 100 V, 8-Pin SOIC

Download IRF7490PBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRF7490PBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO_8_1
click to zoom
3D Models
IRF7490PBF - Infineon  - 3D model - Small Outline Packages - SO_8_1
click to zoom

IRF7490PBF Details

  • Manufacturer Part Number:

    IRF7490PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    91 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    5.4 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    43 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7490PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7490PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRF7490PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF7490PBF is suitable for switching regulator applications due to its low RDS(on) and high current capability.
  • Handle the device with ESD-protective equipment, use an ESD-protective wrist strap, and store the device in an ESD-protective package.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRF7490PBF Overview

Use the download button to access the IRF7490PBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRF74, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRF7490PBF

Showing 0 results

IRF7490PBF Alternates

Showing results

Image Part Number Model
Part Image IRF7490TRPBF Infineon Technologies AG

Power Field-Effect Transistor, 5.4A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7490PBF International Rectifier

Power Field-Effect Transistor, 5.4A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA