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IRF7821PBF - Infineon

Description: MOSFET N-Channel 30V 13.6A SOIC8 Infineon IRF7821PBF N-channel MOSFET Transistor, 13.6 A, 30 V, 8-Pin SOIC

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IRF7821PBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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IRF7821PBF Details

  • Manufacturer Part Number:

    IRF7821PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    44 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    13.6 A

  • Drain-source On Resistance-Max:

    0.0091 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    110 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    155 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7821PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7821PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
  • The recommended gate drive voltage for the IRF7821PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF7821PBF is suitable for switching applications due to its low RDS(on) and high switching speed. However, ensure proper gate drive and layout to minimize switching losses.
  • Use a suitable voltage regulator and overvoltage protection circuit, and consider adding overcurrent protection devices such as fuses or current sensors to prevent damage to the device.

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IRF7821PBF Overview

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Part Image IRF7821PBF International Rectifier

Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF7821TRPBF International Rectifier

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Part Image IRF7821UPBF International Rectifier

Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image FDS6680A_F095 Fairchild Semiconductor Corporation

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For a full list of alternate parts for IRF7821PBF, check out Findchips.com