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IRF7832 - Infineon

Description: MOSFET N-CH 30V 20A 8-SOIC

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IRF7832 - Infineon - PCB symbol
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PCB Footprints
IRF7832 - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8_(H=1.75mm)
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IRF7832 - Infineon - 3D model - Small Outline Packages - SO-8_(H=1.75mm)
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IRF7832 Details

  • Manufacturer Part Number:

    IRF7832

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    4

  • Avalanche Energy Rating (Eas):

    260 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.004 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    155 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF7832 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF7832 is -55°C to 175°C, but it's recommended to operate within -40°C to 150°C for optimal performance and reliability.
  • To ensure proper biasing, make sure to provide a stable voltage supply to the gate driver, and ensure the bootstrap capacitor is properly sized and connected. Also, follow the recommended gate-source voltage (Vgs) and gate-drain voltage (Vgd) ratings.
  • For optimal thermal management, use a multi-layer PCB with a solid ground plane, and ensure good thermal conductivity between the device and the heat sink. Keep the PCB layout compact and symmetrical to minimize parasitic inductances and capacitances.
  • Use a voltage regulator or a voltage clamp to limit the voltage supply to the device. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Also, consider using a fuse or a PTC (Positive Temperature Coefficient) thermistor for added protection.
  • The recommended gate resistance (Rg) value for the IRF7832 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency. A lower Rg value can improve switching speed, but may increase power losses.

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IRF7832 Overview

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