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IRF8915TRPBF - Infineon

Description: MOSFET Dual NChannel HEXFET 20V 8.9A SO8 Infineon IRF8915TRPBF Dual N-channel MOSFET Transistor, 8.9 A, 20 V, 8-Pin SOIC

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IRF8915TRPBF - Infineon - PCB symbol
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PCB Footprints
IRF8915TRPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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IRF8915TRPBF - Infineon - 3D model - Small Outline Packages - SO-8
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IRF8915TRPBF Details

  • Manufacturer Part Number:

    IRF8915TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Drain Current-Max (ID):

    8.9 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Moisture Sensitivity Level:

    1

  • Operating Temperature-Max:

    150 °C

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Surface Mount:

    YES

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

IRF8915TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF8915TRPBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRF8915TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF8915TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a conductive container or bag when not in use.
  • The maximum allowable power dissipation for the IRF8915TRPBF is 150W, but this value can be derated based on the operating temperature and other factors.

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IRF8915TRPBF Overview

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