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IRF9953TRPBF - Infineon

Description: INFINEON - IRF9953TRPBF - Dual MOSFET, Dual P Channel, -2.3 A, -30 V, 0.165 ohm, -10 V, -1 V

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IRF9953TRPBF - Infineon - PCB symbol
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PCB Footprints
IRF9953TRPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8 Package Outline(Mosfet & Fetky)
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IRF9953TRPBF - Infineon - 3D model - Small Outline Packages - SO-8 Package Outline(Mosfet & Fetky)
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IRF9953TRPBF Details

  • Manufacturer Part Number:

    IRF9953TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    57 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    2.3 A

  • Drain-source On Resistance-Max:

    0.25 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF9953TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF9953TRPBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRF9953TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF9953TRPBF is suitable for switching applications due to its low RDS(on) and high switching speed. However, ensure proper gate drive and layout to minimize switching losses.
  • Handle the device with anti-static precautions, use ESD-protective packaging, and ensure proper grounding of the device during assembly and testing.

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