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IRF9956PBF - Infineon

Description: INFINEON - IRF9956PBF - MOSFET, DUAL, NN, LOGIC, SO-8, 50V, 3A

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IRF9956PBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
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IRF9956PBF - Infineon  - 3D model - Small Outline Packages - SO-8
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IRF9956PBF Details

  • Manufacturer Part Number:

    IRF9956PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    44 mJ

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    3.5 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    16 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF9956PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF9956PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
  • The recommended gate drive voltage for the IRF9956PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF9956PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper thermal management and follow the recommended operating conditions.
  • Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure the device is stored in an ESD-protected environment.

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IRF9956PBF Overview

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IRF9956PBF Alternates

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Image Part Number Model
Part Image IRF9956TRPBF International Rectifier

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF9956 International Rectifier

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF9956TR Infineon Technologies AG

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF9956 Infineon Technologies AG

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF9956TR International Rectifier

Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

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