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IRF9Z24NPBF - Infineon

Description: Infineon IRF9Z24NPBF P-channel MOSFET Transistor, 12 A, 55 V, 3-Pin TO-220AB

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IRF9Z24NPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB PACKAGE_1
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IRF9Z24NPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB PACKAGE_1
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IRF9Z24NPBF Details

  • Manufacturer Part Number:

    IRF9Z24NPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    96 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.175 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF9Z24NPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF9Z24NPBF is -55°C to 175°C.
  • Yes, the IRF9Z24NPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
  • The maximum current rating for the IRF9Z24NPBF is 24A.
  • Yes, the IRF9Z24NPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • The IRF9Z24NPBF comes in a TO-220AB package.

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Part Image IRF9Z24NPBF International Rectifier

Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF9Z24N Infineon Technologies AG

Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB