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IRFB3307PBF - Infineon

Description: Infineon IRFB3307PBF N-channel MOSFET, 120 A, 75 V HEXFET, 3-Pin TO-220AB

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IRFB3307PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220AB_3
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IRFB3307PBF - Infineon  - 3D model - Transistor Outline, Vertical - TO220AB_3
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IRFB3307PBF Details

  • Manufacturer Part Number:

    IRFB3307PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    270 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    75 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0063 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Pulsed Drain Current-Max (IDM):

    510 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFB3307PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFB3307PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
  • The recommended gate drive voltage for the IRFB3307PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFB3307PBF is suitable for high-frequency switching applications, but ensure that the device is operated within its specified switching frequency and duty cycle ratings.
  • Handle the device with ESD-protective equipment, and ensure that the device is stored in an ESD-protective package or bag when not in use.

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Part Image IRFB3307 International Rectifier

Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFB3307 Infineon Technologies AG

Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB