- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IRFB9N65APBF
- Part Number IRFB9N65APBF
- Manufacturer Vishay
- Pin Count 3
- Part Category MOSFET (N-Channel)
- Package Category Transistor Outline, Vertical
- Footprint Name Transistor Outline, Vertical - TO-220-1
- Released Date Mar 23, 2022
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
IRFB9N65APBF Details
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Manufacturer Part Number:
IRFB9N65APBF
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Pbfree Code:
Yes
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Rohs Code:
Yes
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Part Life Cycle Code:
Obsolete
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Part Package Code:
TO-220AB
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Pin Count:
3
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ECCN Code:
EAR99
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Manufacturer:
Vishay Intertechnologies
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YTEOL:
0
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Avalanche Energy Rating (Eas):
325 mJ
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Configuration:
SINGLE WITH BUILT-IN DIODE
IRFB9N65APBF Frequently Asked Questions (FAQs)
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The maximum SOA for the IRFB9N65APBF is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or in a separate application note. For the IRFB9N65APBF, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id).
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To ensure the IRFB9N65APBF is fully turned on and off, you should provide a sufficient gate-source voltage (Vgs) and a fast enough switching time. The recommended Vgs is typically around 10V for this device. Additionally, the gate driver should be capable of providing a high current (e.g., 1A) to quickly charge and discharge the gate capacitance.
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The thermal resistance (Rth) of the IRFB9N65APBF is typically around 0.5°C/W (junction-to-case) and 62°C/W (case-to-ambient). This means that for every watt of power dissipated, the junction temperature will increase by 0.5°C. To ensure reliable operation, it's essential to keep the junction temperature below the maximum rated value (150°C for this device).
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The IRFB9N65APBF is suitable for high-frequency switching applications due to its low gate charge (Qg) and internal gate resistance (Rg). However, the maximum switching frequency is limited by the device's parasitic capacitances and the gate driver's capabilities. A good rule of thumb is to keep the switching frequency below 100 kHz to minimize power losses and ensure reliable operation.
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To protect the IRFB9N65APBF from overvoltage and overcurrent conditions, you can use a combination of voltage clamping devices (e.g., zener diodes or TVS diodes) and current sensing resistors. Additionally, consider using a gate driver with built-in overcurrent protection and undervoltage lockout (UVLO) features.
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IRFB9N65APBF Overview
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