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IRFBE30LPBF Overview

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IRFBE30LPBF Vishay Intertechnologies

Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

SIHFBE30L-GE3 Vishay Siliconix

TRANSISTOR 4.1 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power

IRFBE30LPBF International Rectifier

Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

IRFBE30L International Rectifier

Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

IRFBE30L Vishay Intertechnologies

Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

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Image	Part Number	Model
	IRFBE30LPBF Vishay Intertechnologies Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
	SIHFBE30L-GE3 Vishay Siliconix TRANSISTOR 4.1 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power
	IRFBE30LPBF International Rectifier Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
	IRFBE30L International Rectifier Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
	IRFBE30L Vishay Intertechnologies Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
For a full list of alternate parts for IRFBE30LPBF, check out Findchips.com

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