Please enter a minimum 3 letters or numbers
Technical Content
Part Image

IRFD110 - Vishay

Description: MOSFET 100V Single N-Channel HEXFET

Download IRFD110 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
IRFD110 - Vishay - PCB symbol
click to zoom
PCB Footprints
IRFD110 - Vishay PCB footprint - Dual-In-Line Packages - Dual-In-Line Packages - HVM DIP
click to zoom
3D Models
IRFD110 - Vishay - 3D model - Dual-In-Line Packages - HVM DIP
click to zoom

IRFD110 Details

  • Manufacturer Part Number:

    IRFD110

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DIP

  • Package Description:

    HD-1, DIP-4

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1 A

  • Drain-source On Resistance-Max:

    0.54 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDIP-T4

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFD110 Frequently Asked Questions (FAQs)

  • The IRFD110 can operate safely between -55°C to 175°C, but the maximum junction temperature (TJ) should not exceed 175°C.
  • To ensure proper biasing, the gate-source voltage (VGS) should be between -2V to 7V, and the drain-source voltage (VDS) should be between 0V to 100V. Additionally, the gate current (IG) should be limited to 100mA.
  • The recommended gate resistor value for the IRFD110 is between 10Ω to 100Ω, depending on the specific application and switching frequency.
  • Yes, the IRFD110 is suitable for high-frequency switching applications up to 1MHz, but the user should ensure proper PCB layout, decoupling, and thermal management to minimize losses and ensure reliability.
  • To protect the IRFD110, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFD110 Overview

Use the download button to access the IRFD110 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFD1, or try a keyword search, such as Small Signal Field-Effect Transistors

Suggested Parts

If you searched for IRFD110, you might also be interested in these parts:
Part Number
1N5817
PMEG3010ER
TLV9001SIDCKR
TPS7A8101DRBT
ABX00012
LC875BM2A(TQFP100)
UR133-ADJ-A(SOT-223)
TSW-102-08-G-S
TSW-102-08-G-S-RA

Parts related to IRFD110

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

IRFD110 Alternates

Showing results

Image Part Number Model
Part Image IRFD110 Vishay Siliconix

Power Field-Effect Transistor, 1A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Part Image IRFD110PBF Vishay Siliconix

Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image IRFD110 Intersil Corporation

Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image IRFD110 Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET